Plasma reactor apparatus

Details Plasma reactor apparatus Plasma reactor apparatus

1979-05-18

1980-06-24

Weisstuch, Aaron

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 204164, 204192E, 204298, 250531, C23F 102

Patent

active

042093570

ABSTRACT:
A plasma reactor apparatus providing improved uniformity of etching and having a totally active reaction volume. The reactor apparatus is comprised of two electrically separated electrodes which bound a reaction volume. The topmost electrode functions as both a gas distribution manifold for uniformly injecting reactant gases into the reaction volume and as an exhaust manifold for uniformly withdrawing reaction products from the reaction volume. The two electrodes are so configured that the plasma reaction takes place only between the electrodes; there is no inactive space surrounding the electrodes to fill with plasma. The configuration is thus conservative of both reactants and energy. The bottommost plate which serves as a workpiece holder is movable with respect to the upper plate to permit loading and unloading of workpieces. The uppermost plate is the active RF electrode while the workpiece holder is maintained at a RF ground potential. The uppermost plate has a larger electrode area which effectively imposes a dc offset to the RF field which enhances the uniformity of the etching and decreases the undesirable spread of undercut etching.

REFERENCES:
patent: 4094722 (1978-06-01), Yamamoto et al.
patent: 4148705 (1979-04-01), Battey et al.
patent: 4149923 (1979-04-01), Uehara et al.
patent: 4151034 (1979-04-01), Yamamoto et al.
patent: 4158589 (1979-06-01), Keller et al.
patent: 4160690 (1979-07-01), Shibagaki et al.
R. G. Poulsen, "Plasma Etching in Integrated Circuit Manufacture--A Review", J. Vac. Sci. Technol, vol. 14, pp. 266-274 (1977).
Q. T. Jarrett, "Plasma Etching of Semiconductor Wafers", Western Electric Tech. Digest, No. 50, p. 9, Apr. 1978.
H. M. Gartner et al., "Reaction By-Products Collection Surface for Metal & Quartz Ion Etch Systems", IBM Tech. Disc Bull., vol. 20 p. 3106 (1978).
R. R. Garnache et al., "Gas Injection System", IBm Tech. Disc. Bull., vol. 14, p. 255 (1972).

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