Plasma processing system for treating a substrate

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With gas inlet structure

Reexamination Certificate

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C118S7230MW, C118S715000, C156S345410

Reexamination Certificate

active

07396431

ABSTRACT:
A plasma processing system for treating a substrate includes a processing chamber including a first chamber portion configured to receive a first gas for providing a plasma space, and a second chamber portion configured to receive a second gas for providing a process space having process chemistry to treat the substrate. A substrate holder is coupled to the second chamber portion of the processing chamber, and configured to support the substrate proximate the process space, and a plasma source is coupled to the first chamber portion of the processing chamber, and configured to form a plasma in the plasma space. A grid is located between the plasma space and the process space, and configured to permit the diffusion of the plasma between the plasma space and the process space in order to form the process chemistry from the process gas.

REFERENCES:
patent: 5024716 (1991-06-01), Sato
patent: 5234526 (1993-08-01), Chen et al.
patent: 5690781 (1997-11-01), Yoshida et al.
patent: 5863376 (1999-01-01), Wicker et al.
patent: 6026762 (2000-02-01), Kao et al.
patent: 6162323 (2000-12-01), Koshimizu
patent: 6388632 (2002-05-01), Murakawa et al.
patent: 6656540 (2003-12-01), Sakamoto et al.
patent: 6755150 (2004-06-01), Lai et al.
patent: 2002/0000202 (2002-01-01), Yuda et al.
patent: 2003/0077883 (2003-04-01), Ohtake
patent: 2003/0173030 (2003-09-01), Ishii et al.
patent: 2004/0050328 (2004-03-01), Kumagai et al.
patent: 2004/0069232 (2004-04-01), Huang et al.
patent: 2004/0102053 (2004-05-01), Kitagawa et al.

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