Etching a substrate: processes – Gas phase etching of substrate – Application of energy to the gaseous etchant or to the...
Reexamination Certificate
2003-08-07
2009-08-25
Culbert, Roberts (Department: 1792)
Etching a substrate: processes
Gas phase etching of substrate
Application of energy to the gaseous etchant or to the...
C216S067000, C216S071000, C156S345480
Reexamination Certificate
active
07578946
ABSTRACT:
An object of the present invention is to provide a plasma processing system and a plasma processing method which use inductive coupled plasmas but do not cause disadvantages due to slant electric fields immediately after plasmas have been ignited. An other object of the present invention is to provide a plasma processing system and a plasma processing method which use inductive coupled plasmas and include a Faraday shield to thereby remove slant magnetic fields so as to ensure the ignition of plasmas.The plasma processing system comprises a chamber31, a bell jar32, a coil42disposed on the outside of the belljar32, a Faraday shield44disposed between the belljar32and the coil42, a susceptor33, a conducting member49disposed upper of the belljar32, a first high-frequency electric power source for the coil42to generate induced electromagnetic fields, and a second high-frequency electric power source34for generating electric fields between the susceptor33and the conducting member49.
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Culbert Roberts
Smith , Gambrell & Russell, LLP
Tokyo Electron Limited
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