Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Patent
1992-10-26
1993-11-30
Lusignan, Michael
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
427575, 427577, 4272481, B05D 306
Patent
active
052663639
ABSTRACT:
A plasma processing deposition method for forming a material on a substrate is disclosed. The method includes inputting a reactive gas into a reaction chamber, admitting a microwave into the reaction chamber at a predetermined frequency and in a predetermined direction, establishing a magnetic field in the reaction chamber where the direction of the magnetic field is substantially parallel to the direction of the propagation of the microwave and the strength of the magnetic field causes cyclotron resonance at approximately the position where the substrate is held in the reaction chamber, exhausting the reaction chamber to establish a predetermined pressure within the chamber and depositing the material on a surface of the substrate. This method may further include holding the substrate approximately at the predetermined cyclotron resonance position within the reaction chamber in order to readily deposit the material on the surface of the substrate.
REFERENCES:
patent: 4869923 (1989-09-01), Yamazaki
patent: 4973494 (1990-11-01), Yamazaki
patent: 5015494 (1991-05-01), Yamazaki
Kawarada et al. "Large Area Chemical Vapor Deposition of Diamond Particles and Films Using Magneto-Microwave Plasma", Japanese Journal of Applied Physics, vol. 26, No. 6, Jun., 1987, pp. LL 1032-1034.
Lusignan Michael
Semiconductor Energy Laboratory Co,. Ltd.
Utech Benjamin L.
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