Plasma processing method, plasma processing apparatus, and plasm

Details Plasma processing method, plasma processing apparatus, and plasm Plasma processing method, plasma processing apparatus, and plasm

1995-03-03

1998-07-21

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438485, 438758, 438788, 438792, 427569, H01H 100

Patent

active

057834920

ABSTRACT:
A plasma processing method of performing plasma processing such as plasma film formation processing on a target object arranged in a processing vessel is disclosed. This method includes the first step of introducing an inert gas into the processing vessel, the second step of generating a plasma of the inert gas in the processing vessel, the third step of introducing a processing gas for processing the target object into the processing vessel, and the fourth step of generating a plasma of the processing gas in the processing vessel to process the target object.

REFERENCES:
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patent: 5226967 (1993-07-01), Chen et al.
patent: 5241245 (1993-08-01), Barnes et al.
patent: 5328558 (1994-07-01), Kawamura
patent: 5456796 (1995-10-01), Gupta et al.
patent: 5478429 (1995-12-01), Komino et al.

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