Plasma processing method and post-processing method

Details Plasma processing method and post-processing method Plasma processing method and post-processing method

2011-01-18

2011-01-18

Cleveland, Michael (Department: 1712)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

Reexamination Certificate

active

07871532

ABSTRACT:
A plasma processing method for performing a plasma process on a target object placed in a chamber includes a first plasma process of turning a gas containing at least a halogen element into plasma to generate first plasma, thereby processing the target object; a second plasma process, subsequent to the first plasma process, of supplying a gas containing oxygen into the chamber to generate second plasma, thereby processing the chamber and the target object; and a third plasma process, subsequent to the second plasma process, of turning a gas containing at least fluorine into plasma to generate third plasma, thereby processing the target object.

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