Plasma processing method and plasma processing apparatus

Details Plasma processing method and plasma processing apparatus Plasma processing method and plasma processing apparatus

2008-07-01

2008-07-01

Norton, Nadine (Department: 1792)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S079000, C216S069000, C216S071000, C438S725000, C438S689000

Reexamination Certificate

active

07393460

ABSTRACT:
The plasma processing method comprises the step of removing an organic material film forming an upper layer relative to a patterned SiOCH series film by the processing with a plasma of a process gas containing an O2gas, wherein the plasma has an O2+ion density not lower than 1×1011cm−3and an oxygen radical density not higher than 1×1014cm−3.

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