Plasma processing method and plasma processing apparatus

Details Plasma processing method and plasma processing apparatus Plasma processing method and plasma processing apparatus

1997-04-28

2000-08-29

Dang, Thi

Coating apparatus

Gas or vapor deposition

With treating means

156345, C23C 1600

Patent

active

061102873

ABSTRACT:
A plasma processing method in which a high-frequency power is supplied to a processing chamber in which an object to be processed is mounted, thereby producing a plasma in the processing chamber, and the object is processed in an atmosphere of the plasma, wherein the high-frequency power is subjected to modulation by a low-frequency power. In one embodiment a plasma is produced in a processing chamber by using an electric power with a direction of current changed with passing of time, and the object to be processed is processed in an atmosphere of the plasma, wherein a power having a basic frequency is subjected to frequency modulation with a frequency equal to n-times (n=an integer) the basic frequency. In a plasma processing apparatus of the invention, while a process gas is supplied to a processing chamber via a first gas introducing hole formed in an electrode, an object to be processed, which is held on an opposed electrode, is subjected to plasma processing. There is provided a resistance applying [means for applying] apply resistance to the process gas flowing to the processing chamber via the gas introducing hole from the gas introducing means such that a plasma discharge is prevented from occurring in the gas introducing means when a process pressure in the processing chamber is set at 0.5 Torr or less.

REFERENCES:
patent: 4908095 (1990-03-01), Kagatsume et al.
patent: 5074456 (1991-12-01), Degner et al.
patent: 5147497 (1992-09-01), Nozawa et al.

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