Coating processes – Direct application of electrical – magnetic – wave – or... – Ion plating or implantation
Reexamination Certificate
2005-10-27
2010-12-28
Berman, Jack I (Department: 2881)
Coating processes
Direct application of electrical, magnetic, wave, or...
Ion plating or implantation
C438S710000, C438S714000, C438S729000, C438S185000, C438S434000, C438S151000, C438S300000, C216S062000, C118S72300R
Reexamination Certificate
active
07858155
ABSTRACT:
It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing.A prescribed gas is introduced into a vacuum container1from a gas supply apparatus2through a gas inlet11while being exhausted by a turbomolecular pump3as an exhaust apparatus through an exhaust hole12. The pressure in the vacuum container1is kept at a prescribed value by a pressure regulating valve4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source5to a coil8disposed close to a dielectric window7which is opposed to a sample electrode6, whereby induction-coupled plasma is generated in the vacuum container1. A high-frequency power source10for supplying high-frequency electric power to the sample electrode6is provided and functions as a voltage source for controlling the potential of the sample electrode6. A surface crystal layer of a silicon wafer9was rendered amorphous successfully by improving the structure of the sample-electrode6.
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Chinese Office Action, with English Translation, issued in Chinese Patent Application No. CN 200580037487.X, dated Jul. 11, 2008.
Y. Sasaki et al., “B2H6Plasma Doping with “In-situ He Pre-amorphization,”” 2004 Symposium on VLSI Technology, Digest of Technical Papers, The IEEE Electron Devices Society, The Japan Society of Applied Physics, pp. 180-181.
Ito Hiroyuki
Jin Cheng-Guo
Maeshima Satoshi
Mizuno Bunji
Nakayama Ichiro
Berman Jack I
McDermott Will & Emery LLP
Panasonic Corporation
Sahu Meenakshi S
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