Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-02-28
2009-06-02
Olsen, Allan (Department: 1792)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
Reexamination Certificate
active
07541283
ABSTRACT:
A plasma processing method for performing a plasma process on a substrate to be processed by making a plasma act thereon includes the following sequential steps of making a plasma weaker than one used in the plasma process act on the substrate, applying a DC voltage to an electrostatic chuck for attracting and holding the substrate while the weak plasma acts on the substrate, extinguishing the weak plasma, and performing the plasma process. Further, a plasma processing apparatus includes a plasma processing mechanism for performing a plasma process on a substrate to be processed, and a controller for controlling the plasma processing mechanism to thereby perform the plasma processing method.
REFERENCES:
patent: 5310453 (1994-05-01), Fukasawa et al.
patent: 5459632 (1995-10-01), Birang et al.
patent: 5494522 (1996-02-01), Moriya et al.
patent: 5699223 (1997-12-01), Mashiro et al.
patent: 5818682 (1998-10-01), Loo
patent: 5894400 (1999-04-01), Graven et al.
patent: 5946184 (1999-08-01), Kanno et al.
patent: 5997687 (1999-12-01), Koshimizu
patent: 6083361 (2000-07-01), Kobayashi et al.
patent: 6238160 (2001-05-01), Hwang et al.
patent: 6243251 (2001-06-01), Kanno et al.
patent: 6373681 (2002-04-01), Kanno et al.
patent: 6416822 (2002-07-01), Chiang et al.
patent: 6428859 (2002-08-01), Chiang et al.
patent: 6452775 (2002-09-01), Nakajima
patent: 6468384 (2002-10-01), Singh et al.
patent: 6569501 (2003-05-01), Chiang et al.
patent: 6630201 (2003-10-01), Chiang et al.
patent: 6800173 (2004-10-01), Chiang et al.
patent: 6878233 (2005-04-01), Hirose
patent: 7189432 (2007-03-01), Chiang et al.
patent: 7218503 (2007-05-01), Howald
patent: 7265963 (2007-09-01), Hirose
patent: 2002/0073924 (2002-06-01), Chiang et al.
patent: 2002/0076481 (2002-06-01), Chiang et al.
patent: 2002/0076490 (2002-06-01), Chiang et al.
patent: 2002/0076507 (2002-06-01), Chiang et al.
patent: 2002/0076508 (2002-06-01), Chiang et al.
patent: 2002/0104481 (2002-08-01), Chiang et al.
patent: 2002/0144655 (2002-10-01), Chiang et al.
patent: 2002/0144657 (2002-10-01), Chiang et al.
patent: 2002/0144786 (2002-10-01), Chiang et al.
patent: 2002/0146511 (2002-10-01), Chiang et al.
patent: 2002/0164421 (2002-11-01), Chiang et al.
patent: 2002/0164423 (2002-11-01), Chiang et al.
patent: 2002/0197402 (2002-12-01), Chiang et al.
patent: 2004/0212312 (2004-10-01), Chistyakov
patent: 2005/0016471 (2005-01-01), Chiang et al.
patent: 2005/0051100 (2005-03-01), Chiang et al.
patent: 2005/0142873 (2005-06-01), Shindo et al.
patent: 2005/0167263 (2005-08-01), Chistyakov
patent: 2005/0184669 (2005-08-01), Chistyakov
patent: 2005/0191830 (2005-09-01), Collins et al.
patent: 2005/0225923 (2005-10-01), Howald
patent: 2005/0230047 (2005-10-01), Collins et al.
patent: 2006/0046506 (2006-03-01), Fukiage
patent: 2006/0175197 (2006-08-01), Chistyakov
patent: 2007/0065594 (2007-03-01), Chiang et al.
patent: 2007/0188104 (2007-08-01), Chistyakov et al.
patent: 6-318552 (1994-11-01), None
patent: 10-27780 (1998-01-01), None
patent: 10-199965 (1998-07-01), None
Higuchi Kimihiro
Okamoto Shin
Shindo Toshihiko
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Olsen Allan
Tokyo Electron Limited
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