Plasma processing method and plasma processing apparatus

Details Plasma processing method and plasma processing apparatus Plasma processing method and plasma processing apparatus

2007-05-29

2007-05-29

Sircus, Brian (Department: 2836)

Electricity: electrical systems and devices

Electric charge generating or conducting means

Use of forces of electric charge or field

Reexamination Certificate

active

11069551

ABSTRACT:
In a plasma processing apparatus using electrostatic chuck, increase of plasma potential is prevented and abnormal discharge is avoided. The plasma processing apparatus comprises an RF source for generating plasma in a vacuum container, another RF source for applying an RF bias power to a sample, a sample stage having an electrostatic chuck electrode, a DC power supply for applying an electrostatic chuck voltage to the electrode, and a controller for shifting the electrostatic chuck voltage to negative by a potential difference of quarter to half of peak-to-peak voltage of the RF bias power for suppressing increase of plasma potential.

REFERENCES:
patent: 5737177 (1998-04-01), Mett et al.
patent: 6596550 (2003-07-01), Sill et al.

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