Plasma processing method and apparatus using plasma produced by

Details Plasma processing method and apparatus using plasma produced by Plasma processing method and apparatus using plasma produced by

1994-02-15

1998-06-09

Breneman, R. Bruce

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

118723MR, 118723MA, 156345, B44C 122, C23C 1600, C23F 102

Patent

active

057628149

ABSTRACT:
A plasma processing apparatus includes a plasma processing chamber having a stage for placing a substrate to be plasma processed, an exhaust port and a gas introduction nozzle for plasma processing coupled therewith, and a cavity resonator for closing the plasma processing chamber in vacuum manner and coupled through a microwave introducing window through which microwaves are introduced and having slots for radiating microwaves to the plasma processing chamber. Microwaves having increased intensity of an electromagnetic field is supplied to the processing chamber to produce plasma to effect processing of the substrate. An area in which diffusion of plasma is suppressed to reduce loss is formed only in the vicinity of an inner wall of the processing chamber.

REFERENCES:
patent: 4776918 (1988-10-01), Otsubo et al.
patent: 4985109 (1991-01-01), Otsubo et al.
patent: 5032202 (1991-07-01), Tsai et al.
patent: 5304277 (1994-04-01), Ohara et al.
patent: 5304279 (1994-04-01), Coultas et al.
S. Samukawa et al., "Extremely high-selective electron cyclotron resonance plasma etching for phosphorus-doped polycrystalline silicon", Applied Physics Letters, vol. 57, No. 4, Jul. 23, 1990, pp. 403-405.

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