Plasma processing method and apparatus using electron cyclotron

Details Plasma processing method and apparatus using electron cyclotron Plasma processing method and apparatus using electron cyclotron

1990-11-29

1993-01-26

LaRoche, Eugene R.

Electric lamp and discharge devices: systems

Discharge device load with fluent material supply to the...

Plasma generating

31511121, 31323131, 20429838, H05H 118

Patent

active

051824957

ABSTRACT:
In a plasma processing apparatus using ECR, faces in contact with plasma excepting a substance to be processed are covered by an insulating material. By such configuration, discharge caused between the plasma and the substance to be processed in plasma processing is prevented beforehand.

REFERENCES:
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patent: 4776918 (1988-10-01), Otsubo et al.
patent: 4876983 (1989-10-01), Fukuda et al.
patent: 5013401 (1991-05-01), Samukawa et al.
patent: 5021114 (1991-06-01), Saito et al.
Fukuda et al., "Effects of Applied Magnetic Fields on Silicon Oxide Films Formed by Microwave Plasma CVD", Japanese Journal of Applied Physics, vol. 27, No. 10, Oct., 1988, pp. L1962-L1965.
Fukuda et al., "Effects of Excited Plasma Species on Silicon Oxide Films Formed by Microwave Plasma CVD", Japanese Journal of Applied Physics, vol. 28, No. 6, Jun. 1989, pp. 1035-1040.

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