Plasma processing method and apparatus for use in carrying out t

Electric lamp and discharge devices: systems – Discharge device load with fluent material supply to the... – Plasma generating

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31511141, 31323131, H05M 124

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active

051700980

ABSTRACT:
A plasma processing apparatus is provided which includes a plasma reaction chamber in which plasma is generated for processing, an RF power supply for feeding RF power into the plasma reaction chamber through an impedance matching circuit, and a feedback mechanism for maintaining plasma impedance within the plasma reaction chamber substantially constant, the feedback mechanism containing the impedance matching circuit which also functions as impedance sensing means. Also provided is a plasma processing method including the step of etching or depositing films by using plasma, while maintaining plasma impedance substantially constant by applying feedback to at least one selected from the group consisting of gas pressure in the plasma reaction chamber, rate of gas flow into the plasma reaction chamber, magnetic field, microwave power, and RF power.

REFERENCES:
patent: 3569777 (1971-03-01), Beaudry
patent: 4810933 (1989-03-01), Moisan et al.
patent: 4877999 (1989-10-01), Knapp et al.
patent: 4887005 (1989-12-01), Rough et al.
patent: 4935661 (1990-06-01), Heinecke et al.
patent: 4956582 (1990-09-01), Bourassa
"In-Situ Monitoring of Electrical Parameters for Dry Etching," Materials Research Society Symposia Proceedings, vol. 98, 1987.

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