Plasma processing method and apparatus

Details Plasma processing method and apparatus Plasma processing method and apparatus

1989-09-07

1991-08-20

Nguyen, Nam X.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419235, 20429834, 118723, 427 38, 427 39, 156345, 156643, 156646, C23F 404, C23C 1434

Patent

active

050412019

ABSTRACT:
Plasma CVD method and apparatus are described. The apparatus comprises a vacuum chamber in which two pairs of electrodes are provided. A high frequency voltage is applied to one of the pairs in order to produce a plasma from a reactive gas in the chamber. A substrate to be coated is located between the other of the pairs. A relatively low frequency voltage is applied to the other pair of electrodes. By virtue of the low frequency voltage, the substrate is exposed to the bombardment of ions of the plasma during deposition. The bombardment functions to remove relatively soft portions of the depositing material.

REFERENCES:
patent: 4461783 (1984-07-01), Yamazaki
patent: 4615298 (1986-10-01), Yamazaki
patent: 4633811 (1987-01-01), Maruyama
patent: 4723508 (1988-02-01), Yamazaki et al.
patent: 4869924 (1989-09-01), Ito
patent: 4873115 (1989-10-01), Matsumura et al.

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