Plasma processing method and apparatus

Details Plasma processing method and apparatus Plasma processing method and apparatus

2006-09-08

2010-12-28

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Radiation or energy treatment modifying properties of...

C438S301000, C438S530000, C257SE21143

Reexamination Certificate

active

07858537

ABSTRACT:
With evacuation of interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to the substrate surface.

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