Semiconductor device manufacturing: process – Radiation or energy treatment modifying properties of...
Reexamination Certificate
2007-04-03
2007-04-03
Ghyka, Alexander (Department: 2812)
Semiconductor device manufacturing: process
Radiation or energy treatment modifying properties of...
C438S301000, C438S530000, C257SE21143
Reexamination Certificate
active
10935312
ABSTRACT:
With evacuation of an interior of a vacuum chamber halted and with gas supply into the vacuum chamber halted, in a state that a mixed gas of helium gas and diborane gas is sealed in the vacuum chamber, a plasma is generated in a vacuum vessel and simultaneously a high-frequency power is supplied to a sample electrode. By the high-frequency power supplied to the sample electrode, boron is introduced to a proximity to a substrate surface.
REFERENCES:
patent: 4912065 (1990-03-01), Mizuno et al.
patent: 5242539 (1993-09-01), Kumihashi et al.
patent: 9-115851 (1997-05-01), None
Maeshima Satoshi
Mizuno Bunji
Nakayama Ichiro
Okumura Tomohiro
Sasaki Yuichiro
Ghyka Alexander
Matsushita Electric - Industrial Co., Ltd.
Wenderoth , Lind & Ponack, L.L.P.
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