Plasma processing method and apparatus

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

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20419235, 20429834, 118723, 156345, 156643, 427 38, 427 39, 42218605, C23F 404, C23C 1444

Patent

active

049716670

ABSTRACT:
A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electromagnetic power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are additionally applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.

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patent: 4585516 (1986-04-01), Corn et al.
patent: 4723508 (1988-02-01), Yamazaki et al.
patent: 4808553 (1989-02-01), Yamazaki
patent: 4844775 (1989-07-01), Keeble

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