Plasma processing method and apparatus

Details Plasma processing method and apparatus Plasma processing method and apparatus

1997-03-19

1998-10-13

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

118 50, 118723I, 118723E, 118723MW, 427131, 427249, 427294, 427488, 427535, 427569, 427575, H05H 124

Patent

active

058209476

ABSTRACT:
In a vapor phase apparatus such as a plasma chemical vapor deposition (CVD) having a pair of electrodes, a surface of one of the electrodes has an uneven shape (concave portion and convex portion). An interval between the electrodes is 10 mm or less. A density of a convex portion is increased in a center portion of the electrode. An aspect ratio of the uneven shape is increased from a peripheral portion of the electrode to a center portion of the electrode. The aspect ratio represents a ratio (b/a) of a pitch (a) and a height (b) of the convex portion.

REFERENCES:
patent: 4524089 (1985-06-01), Haque et al.

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