Plasma Processing method

Details Plasma Processing method Plasma Processing method

1994-09-19

1997-07-15

Tung, T.

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

156431, 156461, 216 79, H01L 213065

Patent

active

056480008

ABSTRACT:
Ashing processing is performed using an atmosphere pressure discharge apparatus for stably producing discharge at an atmosphere pressure. Dielectric substance is arranged in a space between a pair of electrodes. A rare gas is flowed into the space. An electric field is generated in the space, thereby to produce plasma. A gas for providing oxygen to a rare gas is used as a reactive gas. The concentration of the reactive gas is 3% or less, in particular, 1% or less. Therefore, A resist film or the like formed on a substrate is removed (peeled).

REFERENCES:
patent: 4412119 (1983-10-01), Komatsu et al.
patent: 4699689 (1987-10-01), Bersin
patent: 5198724 (1993-03-01), Koinuma et al.
patent: 5221427 (1993-06-01), Koinuma et al.
patent: 5292396 (1994-03-01), Takashima et al.
patent: 5304407 (1994-04-01), Hayashi et al.

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