Plasma processing method

Details Plasma processing method Plasma processing method

2007-12-04

2007-12-04

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S714000, C156S345520

Reexamination Certificate

active

11002265

ABSTRACT:
A plasma processing method for processing a sample by reducing a pressure within a processing chamber, including mounting the sample on a sample holder disposed in the processing chamber, and processing using a plasma generated in the processing chamber above the sample holder while supplying a gas for heat transfer to a space between a surface of the sample holder having the sample mounted thereon and a rear surface of the sample. The sample holder has a plurality of substantially ring-shaped depressed portions at the surface where the sample is mounted. A pressure in a space between the depressed portions arranged at a central portion of the sample holder with respect to outer circumferential portion and the sample is set to be lower than a pressure in a space between the depressed portions at the outer circumferential portion and the sample.

REFERENCES:
patent: 5490228 (1996-02-01), Soma et al.
patent: 2003/0039951 (2003-02-01), Cheung et al.
patent: 1-251735 (1989-10-01), None
patent: 9-017770 (1997-01-01), None

Affiliated with

Also associated with

Rating

Plasma processing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma processing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3865198