Plasma processing method

Details Plasma processing method Plasma processing method

2007-04-24

2007-04-24

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S714000, C156S345520

Reexamination Certificate

active

10953537

ABSTRACT:
A plasma processing method utilizing a plasma processing apparatus having a plasma generating unit, a process chamber including an outer cylinder for withstanding a reduced pressure, and an inner cylinder made of non-magnetic material and being replaceable arranged inside the outer cylinder, a process gas supply unit for supplying gas to the process chamber, a specimen table for holding a specimen and a vacuum pumping unit. A temperature of the inner cylinder is monitored, and a desired inner cylinder temperature which is inputted in advance in response to a processing condition of the specimen is compared with the monitored temperature of the inner cylinder. A temperature of the outer cylinder is controlled in response to a result of the comparison so as to control the inner cylinder temperature to a predetermined value.

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