Plasma processing method

Details Plasma processing method Plasma processing method

2005-08-30

2005-08-30

Padgett, Marianne (Department: 1762)

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

C427S578000, C427S563000, C427S562000, C438S788000, C438S792000, C438S710000, C216S067000

Reexamination Certificate

active

06936310

ABSTRACT:
In a plasma processing method making use of a plasma processing gas of a reactant gas and an inert gas, it is aimed at enhancing an efficiency of use of high-frequency power and a reactant gas to increase a processing rate. The plasma processing method comprises supplying high frequency power to an electrode2opposed to a substrate6to thereby generate plasma between the electrode2and the substrate6on the basis of a plasma processing gas comprising a reactant gas and an inert gas to perform film formation, etching, surface treatment or the like on the substrate6, pressure P(Torr) of the plasma processing gas being set to satisfy the following relationship 2×10−7(Torr/Hz)×f(Hz)≦P(Torr)≦500(Torr) where f(Hz) is a frequency of high frequency power.

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