Plasma processing method

Details Plasma processing method Plasma processing method

1991-09-05

1993-09-21

Hearn, Brian E.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 156646, 156662, 427572, H01L 2100

Patent

active

052465292

ABSTRACT:
A workpiece is etched with a plasma. First, a chamber is provided in which a pair of electrodes are arranged parallel to each other at a distance. The electrodes define a plasma generation area therebetween. The workpiece is arranged in the chamber. The chamber is evacuated, and a desired plasma generation gas is introduced into the plasma generation area. Light having a wavelength of not more than 436 nm is radiated onto the gas in the plasma generation area for a predetermined period of time. Then, a high-frequency power is applied across the electrodes to generate a plasma from the plasma generation gas. The workpiece is etched with the generated plasma.

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Patent Abstracts of Japan vol. 10, No. 158 (E-409) Jun. 6, 1986 & JP-A-61 014 722 (Toshiba) Jan. 22, 1986.

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