Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-05-17
2005-05-17
Vinh, Lan (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S710000, C438S712000, C438S714000, C216S067000
Reexamination Certificate
active
06893970
ABSTRACT:
According to a plasma processing method, a process gas supplied into a process chamber is used to generate plasma from the process gas and process a substrate placed in the process chamber by means of the plasma. The substrate includes stacked films of at least two types to be etched by the plasma, and, according to any of the films that is to be etched, a change is made in the process gas in the plasma generation period. Accordingly, the time required for any process except for the main plasma process can be shortened so that the total time for the entire plasma process can be shortened to improve the processing speed.
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Hirayama Masaki
Kanetsuki Norio
Ohmi Tadahiro
Yamamoto Tatsushi
Conlin David C.
Edwards & Angell, LLP.
Sharp Kabushiki Kaisha
Tadahiro Ohmi
Tucker David A.
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