Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1996-02-20
1997-10-28
Breneman, R. Bruce
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156345, 216 69, 216 70, 134 11, 134 221, B08B 700, H01L 2100
Patent
active
056814240
DESCRIPTION:
BRIEF SUMMARY
BACKGROUND OF THE INVENTION
The present invention relates to a plasma processing method, and more particularly, it relates to a plasma processing method which is suitable for etching a wafer while holding the same on an electrode by electrostatic force, and using hydrogen bromide (HBr) as an etching gas.
As for the prior art etching process which utilizes hydrogen bromide (HBr), for example, as disclosed in the 53rd Applied Physics Society' Conference Preprint No. 16a-SK-7, it is known that when a polysilicon film provided with a resist mask is etched using HBr gas, a reaction product tends to deposit inside its reaction chamber. Therefore, conventionally, in order to remove the deposited products inside the chamber, a gas containing either one of sulfur hexafluoride (SF.sub.6), nitrogen trifluoride (NF.sub.3), freon 14 (CF.sub.4) and freon 23 (CHF.sub.3), or a mixture gas containing either one of the above and oxygen (O.sub.2) has been used to produce a plasma which is used for plasma cleaning of the interior of the chamber.
The above-mentioned prior art, however, has not taken into account a plasma processing time or through-put. Namely, when the cleaning of the chamber is conducted in a conventional method using a fluoride gas or its mixture with O.sub.2 gas, there was a problem that when the cleaning is carried out with an etch-processed wafer as mounted on the electrode, an adverse effect is caused on a machined shape of the etched wafer, or that when the cleaning is carried out without mounting the wafer on the electrode, there was another problem that the electrode is damaged by etching. Therefore, it was necessary to mount a dummy wafer on the electrode for protection. Thereby, since it was necessary to mount a dummy wafer for every wafer during every cycle of cleaning of the reaction products, it took a substantial time for exchanging the wafer and the dummy, thereby lowering the through-put of the production. In addition, when the electrostatic attractive force is utilized for holding the wafer on the electrode, since it was necessary to carry out a deelectrifying sequence to remove the electric charge on the wafer every time the wafer is exchanged, additional time is required.
SUMMARY OF THE INVENTION
An object of the present invention is to provide a plasma processing method which is capable of carrying out a cleaning with a high throughput without causing any adverse effect on the product.
Another object of the invention is to provide a plasma processing method for plasma-processing of a film of a Si-containing material, which can substantially reduce its etching process time as well as its post processing.
According to one aspect of the present invention, in the plasma processing method which carries out the etching process of the wafer while the same is held on the electrode by electrostatic chuck, residual electrostatic attraction force remaining on the wafer after the completion of the etching is caused to be discharged into a gas plasma of O.sub.2 gas.
In accordance with another aspect of the present invention, the film made of Si-containing material after the same having been etched using a plasma of a bromine-containing gas is subjected to a post-processing using a plasma of a mixture gas containing O.sub.2 and CHF.sub.3 continuously in vacuum.
In the case of a plasma processing by use of HBr as an etching gas, a polymeride between carbon (C) which is a main component of a photoresist mask material to mask a material to be etched and hydrogen (H) present in HBr gas is caused to deposit inside the etching chamber. Therefore, after completion of etching of the wafer having the same wafer as electrostatically chucked on the electrode, O.sub.2 gas instead of the etching gas is introduced into the chamber to generate a plasma of O.sub.2 gas. Thereby, not only the residual electric charge on the wafer resulting from the electrostatic attraction can be deelectrified, but also cleaning of the interior of the chamber can be conducted at the same time by causing C and H which are the main com
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Fujimoto Kenji
Saito Go
Yoshigai Motohiko
Adjodha Michael E.
Breneman R. Bruce
Hitachi , Ltd.
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