Plasma processing device

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – Having glow discharge electrode gas energizing means

Reexamination Certificate

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Reexamination Certificate

active

07338576

ABSTRACT:
Each magnet segment22of a magnetic field forming mechanism21is constructed such that, after the magnetic pole of each magnet segment22set to face a vacuum chamber1as shown in FIG.3A, adjoining magnet segments22are synchronously rotated in opposite directions, and hence every other magnet element22is rotated in the same direction as shown in FIGS.3B,3C to thereby control the status of a multi-pole magnetic field formed in the vacuum chamber1and surrounding a semiconductor wafer W. Therefore, the status of a multi-pole magnetic field can be easily controlled and set appropriately according to a type of plasma processing process to provide a good processing easily.

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