Plasma processing apparatus with a rotating electromagnetic fiel

Details Plasma processing apparatus with a rotating electromagnetic fiel Plasma processing apparatus with a rotating electromagnetic fiel

1994-03-04

1996-09-10

Kunemund, Robert

Coating apparatus

Gas or vapor deposition

With treating means

156345, 20429806, 31511151, C23C 1600

Patent

active

055542239

ABSTRACT:
A plasma process apparatus includes a high-vacuum container in which a semiconductor wafer is horizontally mounted on a susceptor, and into which a process gas such as an etching gas is supplied. Between the susceptor and the container a high-frequency voltage is applied. Around the outer periphery of the container, four high-frequency coils are arranged at given intervals in a circumferential direction. The coils apply a high-frequency power having phase difference of .pi./2 between the adjacent coils, into the container, so that a high-frequency rotating electromagnetic field rotating on a horizontal plane is formed in the container thereby generating a plasma of the process gas. The surface of the semiconductor wafer is processed by the plasma.

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