Plasma processing apparatus using active matching

Details Plasma processing apparatus using active matching Plasma processing apparatus using active matching

2004-09-30

2008-05-20

Hassanzadeh, Parviz (Department: 1792)

Coating apparatus

Gas or vapor deposition

With treating means

C156S345470

Reexamination Certificate

active

07373899

ABSTRACT:
A plasma processing apparatus having a processing chamber connected to a vacuum exhauster so that its inside pressure can be reduced by the vacuum exhauster, a gas feed unit for supplying gas into the processing chamber, a substrate electrode provided in the processing chamber and on which a sample can be placed, an RF power supply connected through a matching circuit to the substrate electrode, plasma generating means for generating plasma within the processing chamber and a voltage waveform control circuit provided within the matching circuit or between the substrate electrode and the matching circuit to flatten the voltage waveform from the RF power supply.

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“Distribution of Ion Energies Incident on Electrodes in Capacitively Coupled rf Discharges”, M. J. Kushner, J. Appl. Phys. 58, 4024 (1985).

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