Plasma processing apparatus and semiconductor device...

Details Plasma processing apparatus and semiconductor device... Plasma processing apparatus and semiconductor device...

2006-01-10

2009-06-02

Hassanzadeh, Parviz (Department: 1792)

Coating apparatus

Gas or vapor deposition

With treating means

Reexamination Certificate

active

07540257

ABSTRACT:
A plasma processing apparatus of this invention includes a sealable chamber to be introduced with reactive material gas, a plurality of pairs of cathode-anode bodies arranged in the chamber, for forming a plurality of discharge spaces for performing plasma discharge of the material gas, a power supply for plasma discharge, placed outside the chamber, a matching box placed outside the chamber, for matching impedance between the cathode-anode bodies and the power supply, and a power introduction wire extending to each of the cathodes from the power supply via the matching box. Herein, the power introduction wire is branched to the number corresponding to the number of the cathodes between the matching box and the cathodes, and the branched wires are symmetrically extended.

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