Plasma processing apparatus and processing method

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With plasma generation means remote from processing chamber

Reexamination Certificate

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C438S798000

Reexamination Certificate

active

06939435

ABSTRACT:
The present invention provides a plasma processing apparatus and processing method capable of maintaining a constant processing profile. The plasma processing apparatus for providing a plasma processing to a wafer placed in a processing chamber comprises a processing vessel1aconstituting the processing chamber1, process gas supply devices3, 4for supplying processing gas to the processing chamber1, and a plasma generating means2for generating plasma by supplying electromagnetic energy to the processing chamber and dissociating the process gas supplied to the processing chamber, wherein the apparatus further comprises a processing chamber surface temperature control unit15for controlling the inner surface temperature of the processing chamber, the control unit controlling the temperature by heating the inner surface of the processing chamber by generating plasma in the chamber for a predetermined processing time based on a processing history after terminating a cleaning process and prior to performing the wafer processing.

REFERENCES:
patent: 6214162 (2001-04-01), Koshimizu
patent: 2003/0052086 (2003-03-01), Mizumura et al.
patent: 08-085885 (1996-04-01), None
patent: 2003-173976 (2003-06-01), None
patent: 2003-518328 (2003-06-01), None
patent: 2003-243362 (2003-08-01), None
patent: 2003-309106 (2003-10-01), None
patent: WO 01/45490 (2001-06-01), None

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