Plasma processing apparatus and plasma processing system...

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – Having glow discharge electrode gas energizing means

Reexamination Certificate

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C156S345430, C156S345470, C118S7230ER, C118S7230AN

Reexamination Certificate

active

06899787

ABSTRACT:
A plasma processing unit has two electrodes for exciting a plasma, a plasma processing chamber, an RF generator, a matching circuit for performing impedance matching between the plasma processing chamber and the RF generator, a feeder that connects an output terminal of the matching circuit to one of the electrode, and a supplier that connects the RF generator to an input terminal of the matching circuit. The feeder is arranged to decrease the average density per unit volume of the RF power supplied from the RF generator as the RF power flows from the output terminal of the matching circuit to the electrode. The section of the plasma processing unit that is DC-grounded has a surface provided with a low-resistance portion. The supplier or the feeder is fixed on a floor using RF impedance adjustors so as to prevent the RF impedance therein from changing.

REFERENCES:
patent: 5605576 (1997-02-01), Sasaki et al.
patent: 6028395 (2000-02-01), Holland et al.
patent: 6155202 (2000-12-01), Nakano et al.
patent: 2000-100789 (2000-04-01), None
patent: 2000-269199 (2000-09-01), None
patent: 2001-89863 (2001-04-01), None
patent: 2001-148378 (2001-05-01), None
patent: WO 01/01441 (2001-01-01), None

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