Plasma processing apparatus and plasma processing method

Details Plasma processing apparatus and plasma processing method Plasma processing apparatus and plasma processing method

2006-10-10

2010-06-15

Tran, Binh X (Department: 1792)

Etching a substrate: processes

Gas phase etching of substrate

C216S067000, C216S071000, C156S345470, C156S345520, C156S345420, C156S054000, C156S345550

Reexamination Certificate

active

07736528

ABSTRACT:
A tray15for a dry etching apparatus1has substrate accommodation holes19A to19D penetrating thickness direction and a substrate support portion21supporting an outer peripheral edge portion of a lower surface2aof a substrate2. A dielectric plate23has a tray support surface28supporting a lower surface of the tray15, substrate placement portions29A through29D inserted from a lower surface side of the tray15into the substrate accommodation holes19A through19D and having a substrate placement surface31at its upper end surface for placing the substrate2. A dc voltage applying mechanism43applies a dc voltage to an electrostatic attraction electrode40. A heat conduction gas supply mechanism45supplies a heat conduction gas between the substrate2and substrate placement surface31. The substrate2can be retained on the substrate placement surface31with high degree of adhesion. This results in that the cooling efficiency of the substrate2is improved and processing is uniformed at the entire region of the substrate surface including the vicinity of the outer peripheral edge.

REFERENCES:
patent: 6344105 (2002-02-01), Daugherty et al.
patent: 6492612 (2002-12-01), Taguchi et al.
patent: 2004/0261946 (2004-12-01), Endoh et al.
patent: 2006/0002053 (2006-01-01), Brown et al.
patent: 2006/0090706 (2006-05-01), Miller et al.
patent: 2006/0102288 (2006-05-01), Satoh et al.
patent: 2006/0108231 (2006-05-01), Weichart
patent: 2006/0238953 (2006-10-01), Hanawa et al.
patent: 2-113330 (1990-09-01), None
patent: 4-313220 (1992-11-01), None
patent: 6-34243 (1994-05-01), None
patent: 7-335616 (1995-12-01), None
patent: 8-316286 (1996-11-01), None
patent: 11-121600 (1999-04-01), None
patent: 2000-58514 (2000-02-01), None
patent: 2000-252267 (2000-09-01), None
patent: 2001-7090 (2001-01-01), None
patent: 2001-230234 (2001-08-01), None
patent: 2003-503841 (2003-01-01), None
patent: 2003-197607 (2003-07-01), None
patent: 2004-259825 (2004-09-01), None
patent: 2004-273533 (2004-09-01), None
patent: 2005-64460 (2005-03-01), None
patent: 00/41229 (2000-07-01), None
patent: 01/01445 (2001-01-01), None
International Search Report issued Dec. 26, 2006 in the International (PCT) Application No. PCT/JP2006/320216.
International Preliminary Report on Patentability issued Apr. 24, 2008 in the International (PCT) Application No. PCT/JP2006/320216.
Korean Office Action issued Jan. 14, 2010 in the corresponding application No. 10-2008-7008556 (with English translation).

Affiliated with

Also associated with

Rating

Plasma processing apparatus and plasma processing method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma processing apparatus and plasma processing method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing apparatus and plasma processing method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4155780