Plasma processing apparatus and plasma processing method

Details Plasma processing apparatus and plasma processing method Plasma processing apparatus and plasma processing method

2007-03-30

2008-10-07

Paschall, Mark H (Department: 3742)

Electric heating

Metal heating

By arc

C219S121440, C219S121480, C156S345360, C315S111810, C204S298380

Reexamination Certificate

active

07432468

ABSTRACT:
A microwave plasma processing apparatus100allows microwaves, passed through a plurality of slots37, to be transmitted through a plurality of dielectric parts31supported by beams26, raises a gas to plasma with the transmitted microwaves and processes a substrate G with the plasma. The beams26are made to project out toward the substrate so as to ensure that the plasma electron density Ne around the ends of the beams26is equal to or greater than a cutoff plasma electron density Nc. The projecting beams26inhibits interference attributable to surface waves generated with the electrical field energy of microwaves transmitted through adjacent dielectric parts31and interference attributable to electrons and ions propagated through the plasma generated under a given dielectric part31to reach the plasma generated under an adjacent dielectric part as the plasma generated under the individual dielectric parts31is diffused.

REFERENCES:
patent: 6830652 (2004-12-01), Ohmi et al.
patent: 2004/0221809 (2004-11-01), Ohmi et al.
patent: 2005/0205015 (2005-09-01), Sasaki et al.
“Microwave Plasma Technologies”, compiled by the Microwave Plasma Research Specialists' Committee, Electric Science Conference, published by Ohm Publishing Company on Sep. 25, 2003 (with Partial English Translation), 5 pages.

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