Plasma processing apparatus and method

Details Plasma processing apparatus and method Plasma processing apparatus and method

1995-10-30

1998-09-08

Nguyen, Nam

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 67, 156345, 1566431, 20429807, 20429809, 20429815, 20429831, 20429833, 118723E, 118724, 118728, 4272481, C23F 102, C23C 1450, C23C 1600

Patent

active

058040897

ABSTRACT:
A plasma processing apparatus includes a vacuum container accommodating a to-be-processed substrate. A vacuum discharge device discharges gas from the container, and a gas feed device feeds a gas in the container. A pair of electrodes includes one which has a concave surface for holding the substrate thereon. A high frequency power supply device supplies a high frequency power to the electrodes, a gas feed device for filling between the substrate and the electrodes with an inert gas to cool the substrate, and a holding device for pressing a side end face of the substrate in a direction along a surface of the substrate to shape the substrate into a concave while holding the substrate on the concave surface of the electrode.

REFERENCES:
patent: 4458746 (1984-07-01), Holden et al.
patent: 4724222 (1988-02-01), Feldman
patent: 4931135 (1990-06-01), Horiuchi et al.
patent: 5203958 (1993-04-01), Arai et al.
patent: 5509464 (1996-04-01), Turner et al.

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