Plasma processing apparatus and method

Details Plasma processing apparatus and method Plasma processing apparatus and method

2005-03-30

2010-12-07

Hassanzadeh, Parviz (Department: 1716)

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

Having glow discharge electrode gas energizing means

Reexamination Certificate

active

07846293

ABSTRACT:
A plasma processing apparatus includes a worktable in a process chamber to horizontally place a target substrate thereon. A plasma generation space is defined above and around the worktable within the process chamber. The plasma generation space includes a peripheral plasma region and a main plasma region respectively located outside and inside an outer edge of the target substrate placed on the worktable. The apparatus further includes a magnetic field forming mechanism configured to form a magnetic field within the peripheral plasma region. The magnetic field includes magnetic force lines extending through the peripheral plasma region between a start position and an end position, at least one of which is located radially inside a sidewall of the process chamber.

REFERENCES:
patent: 4842707 (1989-06-01), Kinoshita
patent: 5032205 (1991-07-01), Hershkowitz et al.
patent: 5304277 (1994-04-01), Ohara et al.
patent: 6074518 (2000-06-01), Imafuku et al.
patent: 6523493 (2003-02-01), Brcka
patent: 7067034 (2006-06-01), Bailey, III
patent: 7419567 (2008-09-01), Iwasaki et al.
patent: 2004/0121610 (2004-06-01), Russell
patent: 1164122 (1997-11-01), None
patent: 04324631 (1992-11-01), None
patent: 06181187 (1994-06-01), None
patent: 06325899 (1994-11-01), None
patent: 08-264515 (1996-10-01), None
patent: 08-311668 (1996-11-01), None
patent: 9-8009 (1997-01-01), None
patent: 10-163173 (1998-06-01), None
patent: 10163173 (1998-06-01), None
patent: 2000-323463 (2000-11-01), None
patent: 2001152332 (2001-06-01), None
patent: 2003-124198 (2003-04-01), None
patent: 2003-0005241 (2003-01-01), None

Affiliated with

Also associated with

Rating

Plasma processing apparatus and method does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma processing apparatus and method, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing apparatus and method will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4223322