Plasma processing apparatus and method

Details Plasma processing apparatus and method Plasma processing apparatus and method

2006-04-11

2006-04-11

McDonald, Rodney G. (Department: 1753)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S069000, C216S059000, C156S345240, C156S345280, C438S710000, C204S298030, C204S298320, C204S192130, C204S192330, C118S7230ER, C422S186040

Reexamination Certificate

active

07025895

ABSTRACT:
A plasma processing apparatus and method are capable of performing etching with high precision without damaging the semiconductor wafer. The plasma processing apparatus has a plasma generation power supply for generating a plasma within a processing chamber; a high-frequency power supply for applying a high frequency wave to a sample stage installed within the processing chamber; and control means for controlling the plasma generation power supply or the high-frequency power supply based on parameter settings for an output intensity and an output mode for each process step. In this regard, when the process steps are switched, the control means compares parameters for a current process step with those for a next process step and then switches either the output intensities or the output modes before switching the output modes or the output intensities, respectively.

REFERENCES:
patent: 4263088 (1981-04-01), Gorin
patent: 4808258 (1989-02-01), Otsubo et al.
patent: 6720268 (2004-04-01), Laermer et al.

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