Plasma processing apparatus and method

Details Plasma processing apparatus and method Plasma processing apparatus and method

1998-11-02

2000-12-26

Mills, Gregory

Coating apparatus

Gas or vapor deposition

With treating means

118723E, 118723MW, C23C 1600

Patent

active

061652741

ABSTRACT:
A plasma processing apparatus for plasma-processing a substrate arranged in a reaction chamber using a high frequency power supplied by a high frequency power introduction means, wherein said high frequency power introduction means comprises a cathode electrode and a conductor portion capable of transmitting a high frequency power to said cathode electrode, said conductor portion being penetrated a wall of said reaction chamber while said conductor portion being electrically isolated from said wall of said reaction chamber by means of an insulating material, at least a part of said insulating material comprising a porous ceramic material, wherein a fluid is introduced through said porous ceramic material to control the temperature of said cathode electrode and/or that of said conductor portion.

REFERENCES:
patent: 5287914 (1994-02-01), Hughes
patent: 5439715 (1995-08-01), Okamura et al.
patent: 5597623 (1997-01-01), Takai et al.
patent: 5720818 (1998-02-01), Donde et al.

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