Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1992-07-23

1993-12-21

Nguyen, Nam

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

20429831, 20429834, 20429837, C23F 102

Patent

active

052717887

ABSTRACT:
A magnetron plasma etching apparatus comprises a suscepter serving as an electrode on which a silicon wafer is mounted. A carbon ring having an outer diameter larger than the diameter of the wafer and an electrical resistance lower than that of the wafer, is arranged around the suscepter. The carbon ring is electrically connected to the suscepter. The carbon ring improves uniformity of etching of the wafer.

REFERENCES:
patent: 4552369 (1985-11-01), Garrett
patent: 4572759 (1986-02-01), Benzing
patent: 4793975 (1988-12-01), Drage
patent: 4871420 (1989-10-01), Alexander, Jr. et al.
patent: 4878995 (1989-11-01), Arikado et al.
patent: 4891087 (1990-01-01), Davis et al.
patent: 4906347 (1990-03-01), Tomita et al.
patent: 4943361 (1990-07-01), Kakehi et al.
patent: 4968374 (1990-11-01), Tsukada et al.
patent: 5147497 (1992-09-01), Nozawa et al.
IBM Technical Disclosure Bulletin, vol. 30, No. 2, Jul. 1987, pp. 543-544, "Quartz Dielectric Cathode Ring Improves Etch Rate".
Patent Abstracts of Japan, vol. 13, No. 18, (E-704), Jan. 17, 1989, & JP-A-63 224 232, Sep. 19, 1988, Kakehi Yutaka, et al., "Plasma Treatment and Device Therefor".

Affiliated with

Also associated with

Rating

Plasma processing apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma processing apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-306136