Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1996-08-14

1998-02-10

Niebling, John

Coating apparatus

Gas or vapor deposition

With treating means

118723IR, C23C 1600

Patent

active

057164517

ABSTRACT:
A plasma etching apparatus of the induction coupling type for processing an LCD substrate has a process container forming an airtight process room. A work table is arranged in the process room for supporting the LCD substrate. A vacuum pump is arranged for exhausting and setting the process room at a vacuum. An antenna block having a plurality of dielectric layers is arranged to face the work table. An RF antenna is embedded in one of the dielectric layers of the antenna block for forming an electric field. A power supply is connected to the RF antenna for applying an RF power. The lowermost layer of the antenna block is formed as a shower head for supplying a process gas into the process room from a position between the RF antenna and the work table. At least part of said process gas is turned into plasma by the electric field.

REFERENCES:
patent: 5514246 (1996-05-01), Blalock
patent: 5522934 (1996-06-01), Suzuki et al.
patent: 5525159 (1996-06-01), Hama et al.
patent: 5529657 (1996-06-01), Ishii
patent: 5531834 (1996-07-01), Ishizuka et al.
Patent Abstracts of Japan, vol. 95, No. 004, JP-A-07 106095, Apr. 21, 1995.

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