Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1999-01-04

2000-06-13

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118723E, 118723MA, C23F 102, C23C 1600

Patent

active

060745185

ABSTRACT:
A plasma processing apparatus comprises a chamber, and an upper electrode and a lower electrode, parallelly provided in the chamber to oppose each other at a predetermined interval, for defining a plasma generation region between the electrodes. An object to be processed is mounted on the lower electrode. RF powers are supplied to the electrodes, so that a plasma generates between the electrodes, thereby performing a plasma process with respect to the object to be processed. A cylindrical ground electrode is provided around the plasma generation region in the chamber, for enclosing the plasma in the plasma generation region, and has a plurality of through holes for passing a process gas.

REFERENCES:
patent: 5215619 (1993-06-01), Cheng et al.
patent: 5556501 (1996-09-01), Collins et al.
patent: 5795452 (1998-08-01), Kinoshita et al.

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