Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1994-10-04

1997-11-04

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118723I, 20429806, 20429807, 20429833, 20429834, H05H 100

Patent

active

056835370

ABSTRACT:
A plasma processing apparatus includes an air-tight chamber consisting of a conductive material, which is grounded, a susceptor provided in the air-tight chamber, for supporting a wafer to be processed, and an RF antenna constituted by a flat coil which is provided in the air-tight chamber to oppose, at a predetermined gap, the wafer which is mounted on the susceptor. A process gas is supplied into the chamber, and an RF power is applied to the RF antenna to generate a plasma between the antenna and the wafer, thereby processing the wafer with the plasma.

REFERENCES:
patent: 4844775 (1989-07-01), Keeble
patent: 4948458 (1990-08-01), Ogle
patent: 5277751 (1994-01-01), Ogle
patent: 5279669 (1994-01-01), Lee

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