Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1997-07-15

1998-06-16

Bueker, Richard

Coating apparatus

Gas or vapor deposition

With treating means

118715, 118724, C23C 1600

Patent

active

057663645

ABSTRACT:
Generated heat is effectively dissipated to prevent thermal deformation of a gas ejector plate in a plasma processing apparatus which is capable of processing a substrate of large scale. A temperature controlling plate 106 and heat conductor 109 are fixedly disposed on the upper electrode-cum-gas ejector plate 105 which is provided with a multiplicity of gas ejecting apertures 105a disposed at regular intervals. The heat conductor 109 is constructed to be a latticed member for effectively conducting heat from the gas ejector plate 105 to the temperature controlling plate 106, and has a plurality of gas pressure equalizing spaces 109a defined between crossing bars of the lattice for pressuring process gas to be evenly ejected through the gas ejecting apertures 105a.

REFERENCES:
patent: 5595606 (1997-01-01), Fujikawa
patent: 5653806 (1997-08-01), van Buskirk

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