Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1993-02-17

1994-05-31

Nguyen, Nam

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419212, 20429808, 20429834, C23C 1434

Patent

active

053166450

ABSTRACT:
A plasma processing apparatus comprises: a first electrode connectable with a plasma generating power source; a second electrode capable of supporting a substrate to be subjected to a plasma-involving surface treatment; a third electrode enclosing a space between the first and second electrodes, all the electrodes being positioned in an evacuatable chamber; and potential control means for controlling the potential of the third electrode.

REFERENCES:
patent: 3763031 (1973-10-01), Scow et al.
patent: 4038171 (1977-07-01), Moss et al.
patent: 4464223 (1984-08-01), Gorin
patent: 4818359 (1989-04-01), Jones et al.
patent: 4874494 (1989-10-01), Ohmi
patent: 4997539 (1991-03-01), Komizo et al.
patent: 5006192 (1991-04-01), Deguchi
patent: 5006218 (1991-04-01), Yoshida et al.

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