Plasma processing apparatus

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156345, 118723, 427575, 20429816, H01L 2100

Patent

active

051819864

ABSTRACT:
In a plasma processing device a plasma generation chamber communicates with a processing chamber holding a substrate. A first solenoid is disposed around the generation chamber in a coaxial relationship therewith and a second solenoid is disposed near the substrate. Processing includes generating a gas plasma by flowing a gas into the generation chamber, introducing microwave radiation into the chamber and controlling the first solenoid current to produce a magnetic field in the generation chamber. In particular, the value of a magnetic flux density at any point on a plane perpendicular to an axis of the first solenoid at a lengthwise midpoint is made to be higher than 1.01 times the value of the magnetic flux density satisfying the electron cyclotron resonance condition. And the value of the magnetic flux density at any point on a plane perpendicular to the axis of the first solenoid at an end is made to be lower than 0.99 times the value of the magnetic flux density satisfying the electron cycltoron resonance condition. Plasma is extracted from the generation chamber along lines of magnetic force produced by the first solenoid into the processing chamber and is directed onto a surface of the semiconductor substrate along lines of magnetic force of a cusp-shaped magnetic field produced by the second solenoid so that the plasma processes the surface of the semiconductor substrate.

REFERENCES:
patent: 4298419 (1981-11-01), Suzuki et al.
patent: 4721553 (1988-01-01), Saito et al.
patent: 4776918 (1988-10-01), Otsubo et al.
patent: 4876983 (1989-10-01), Fukuda et al.
patent: 4891118 (1990-01-01), Ooiwa et al.
patent: 4983253 (1991-01-01), Wolfe et al.
patent: 4990229 (1991-02-01), Campbell et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Plasma processing apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Plasma processing apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing apparatus will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1410895

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.