Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1991-03-19
1993-01-26
Hearn, Brian E.
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156345, 118723, 427575, 20429816, H01L 2100
Patent
active
051819864
ABSTRACT:
In a plasma processing device a plasma generation chamber communicates with a processing chamber holding a substrate. A first solenoid is disposed around the generation chamber in a coaxial relationship therewith and a second solenoid is disposed near the substrate. Processing includes generating a gas plasma by flowing a gas into the generation chamber, introducing microwave radiation into the chamber and controlling the first solenoid current to produce a magnetic field in the generation chamber. In particular, the value of a magnetic flux density at any point on a plane perpendicular to an axis of the first solenoid at a lengthwise midpoint is made to be higher than 1.01 times the value of the magnetic flux density satisfying the electron cyclotron resonance condition. And the value of the magnetic flux density at any point on a plane perpendicular to the axis of the first solenoid at an end is made to be lower than 0.99 times the value of the magnetic flux density satisfying the electron cycltoron resonance condition. Plasma is extracted from the generation chamber along lines of magnetic force produced by the first solenoid into the processing chamber and is directed onto a surface of the semiconductor substrate along lines of magnetic force of a cusp-shaped magnetic field produced by the second solenoid so that the plasma processes the surface of the semiconductor substrate.
REFERENCES:
patent: 4298419 (1981-11-01), Suzuki et al.
patent: 4721553 (1988-01-01), Saito et al.
patent: 4776918 (1988-10-01), Otsubo et al.
patent: 4876983 (1989-10-01), Fukuda et al.
patent: 4891118 (1990-01-01), Ooiwa et al.
patent: 4983253 (1991-01-01), Wolfe et al.
patent: 4990229 (1991-02-01), Campbell et al.
Fuji Electric & Co., Ltd.
Goudreau George
Hearn Brian E.
LandOfFree
Plasma processing apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Plasma processing apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Plasma processing apparatus will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1410895