Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1988-11-23

1990-01-02

Weisstuch, Aaron

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

156345, 156643, 118723, 20419232, H01H 146

Patent

active

048911186

ABSTRACT:
In a typical plasma processing apparatus, microwaves are generated into a processing chamber which contains a gas and a substrate. Magnetic fields transmitted into the processing chamber cause plasma to be produced when microwaves are generated. Typically an RF bias voltage is applied to the substrate during the process. By optimizing the RF bias voltage which the pulses of microwaves the apparatus produces a higher quality thin film, or etching process, without damaging the substrate surface.

REFERENCES:
patent: 4316791 (1982-02-01), Taillet
patent: 4581100 (1986-04-01), Hatzakis et al.
patent: 4705595 (1987-11-01), Okudaira et al.
patent: 4776918 (1988-10-01), Otsubo et al.
patent: 4795529 (1989-01-01), Kawasaki et al.
patent: 4808258 (1989-02-01), Otsubo et al.

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