Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1993-07-28

1994-12-27

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

C23F 102

Patent

active

053762134

ABSTRACT:
A plasma etching apparatus includes a wafer-mount arranged in an aluminum-made process chamber. The wafer-mount comprises an aluminum-made susceptor, a heater fixing frame and a cooling block, and a ceramics heater is attached to the heater fixing frame. A bore in which liquid nitrogen is contained is formed in the cooling block. The cold of the cooling block is transmitted to a wafer on the susceptor to cool it while it is being etched. The ceramics heater adjusts the temperature of the wafer cooled. Liquid nitrogen is circulated in the bore in the cooling block, passing through coolant passages defined by a pair of joint devices which connect the bottom of the process chamber and the cooling block to each other. Each of the joint devices includes an upper conductive connector secured to the cooling block, a lower conductive connector secured to the chamber bottom, and an electrical- and thermal-insulating ring for connecting both of the connectors to each other while keeping them electrical- and thermal-insulated.

REFERENCES:
patent: 5078851 (1992-01-01), Nishihata
patent: 5147497 (1992-09-01), Nozawa
patent: 5223113 (1993-06-01), Kaneko et al.
patent: 5270266 (1993-12-01), Hirano
patent: 5290381 (1994-03-01), Nozawa

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