Plasma processing apparatus

Electric lamp and discharge devices: systems – Discharge device load with fluent material supply to the... – Plasma generating

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118 501, 118715, 31323131, H01J 724, H01J 1726, H05B 3126, C23C 1400

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active

049704354

ABSTRACT:
In a plasma processing apparatus of this invention, a reaction chamber opposed to a plasma generating chmaber is entirely opened at its one side surface opposing the obect to be processed, and an interval between the one side surface and the other side surface is set to be an integer multiple of a 1/2 wavelength of the microwave. A microwave oscillated by a microwave oscillator and supplied to a vacuum vessel can be converted into a plasma energy with high conversion efficiency, thereby minimizing a reflected wave.

REFERENCES:
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patent: 4401054 (1983-08-01), Matsuo et al.
patent: 4423303 (1983-12-01), Hirose et al.
patent: 4611121 (1986-09-01), Miyamura et al.
Japanese Journal of Applied Physics, vol. 16, No. 11, Nov. 1977, pp. 1979-1984; K. Suzuki, et al.
Japanese Journal of Applied Physics, vol. 19, No. 5, May 1980, pp. 839-843; Y. Sakamoto, et al.
Japanese Journal of Applied Physics, vol. 21, No. 1, Jan. 1982, pp. L4-L6; S. Matsuo, et al.
Japanese Journal of Applied Physics, vol. 22, No. 4, Apr. 1983, pp. L210-L212; S. Matsuo, et al.
Proc. International Engineering Congress-ISIAT'83 & IPAT'83, Kvoto (1983); K. Asakawa, et al. pp. 759-764.

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