Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – With radio frequency antenna or inductive coil gas...
Reexamination Certificate
2007-03-30
2011-10-25
Alejandro, Luz L. (Department: 1716)
Adhesive bonding and miscellaneous chemical manufacture
Differential fluid etching apparatus
With radio frequency antenna or inductive coil gas...
C204S298060, C118S7230IR
Reexamination Certificate
active
08043471
ABSTRACT:
A plasma processing apparatus includes a processing chamber; a plasma generating unit for generating a plasma of a gas supplied into the processing chamber; a substrate mounting table, disposed in the processing chamber, for mounting a semiconductor substrate having a surface on which an etching and/or a film forming process is to be performed. The apparatus further includes a metal member disposed in the processing chamber and to be etched by the plasma generated in the processing chamber to release a precursor of a film to be formed by the film forming process into the processing chamber; a gas supply unit for supplying a first and a second gas into the processing chamber, wherein the second gas which includes halogen atoms and is different from the first gas; a first and a second wiring for supplying high frequency power to the metal member and the substrate mounting table, respectively.
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Japanese Office Action (with English Translation) issued May 24, 2011 in Japanese Application No. 2006-099655 filed Mar. 31, 2006, 7 pages.
Alejandro Luz L.
Oblon, Spivak McClelland, Maier & Neustadt, L.L.P.
Tokyo Electron Limited
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