Plasma processing apparatus

Adhesive bonding and miscellaneous chemical manufacture – Differential fluid etching apparatus – Having glow discharge electrode gas energizing means

Reexamination Certificate

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Details

C118S7230ER, C156S345470

Reexamination Certificate

active

10851325

ABSTRACT:
The present invention concerns a plasma processing apparatus for processing a processing object by applying two types of high-frequency power with different frequencies to generate plasma. A first high-frequency line is provided with a first filter circuit for attenuating a high-frequency current from a second high-frequency power supply. A second high-frequency line is provided with a second filter circuit for attenuating a high-frequency current from a first high-frequency power supply. The first filter circuit is provided with a variable capacitor for changing a circuit constant. For changing the circuit constant, the variable capacitor is varied so that a resonance point becomes greater than an optimum resonance point most attenuating a high frequency in the second high-frequency power supply. Doing so decreases a sputter rate of the generated plasma affected on a wall surface of the processing chamber.

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patent: 6270618 (2001-08-01), Nakano et al.
patent: 2001-7086 (2001-01-01), None

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